Semiconductor device, process for the production thereof and apparatus for microwave plasma treatment
US5347100A · kind A · utility
7Cited by
5References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 26, 1992 |
| Grant date | Sep 13, 1994 |
| Priority date | — |
| Expiry date | Mar 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a semiconductor device comprising a semiconductor substrate, a first metal connection layers, a first substrate oxide layer having a specific form, and a second connection pattern layer; a process for producing the device; and a microwave plasma treatment apparatus having gas feed ports in a specific position. The highly reliable semiconductor devices can be produced at a high rate at high yields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.