Method for treatment of semiconductor wafer
US5348893A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 1993 |
| Grant date | Sep 20, 1994 |
| Priority date | — |
| Expiry date | Mar 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the impartation of a mechanical distortion to a semiconductor wafer by the collision of particles against the surface of the semiconductor wafer is disclosed which represses the pollution of the semiconductor wafer with impurities from the particles, permits effective removal of the impurities adhering to the surface of the semiconductor wafer, and allows the density of lattice defects imparted into the semiconductor wafer to be freely varied and controlled as desired. The method which effects the intentional impartation of lattice distortion to the surface of the semiconductor wafer by the collision of particles against the semiconductor wafer comprises molding a substance possessing a melting point of not higher than 30.degree. C. and exhibiting solubility in water into particles of a diameter in the range of from 0.001 to 1 mm and causing the particles to collide against the surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.