Dry etching method
US5354416A · kind A · utility
56Cited by
11References
26Claims
0Family size
Inventors
Key dates
| Filing date | Apr 2, 1990 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | Apr 2, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.