Dry etching method

US5356515A · kind A · utility

Assignees

• TOKYO ELECTRON LIMITED · JP
• Kabushiki Kaisha Toshiba · JP

Inventors

• Yoshifumi Tahara · Machida, JP
• Yoshihisa Hirano · Ebeye, US
• Masahiro Ogasawara · Kofu, JP
• Isahiro Hasegawa · Zushi, JP
• Keiji Horioka · Yokohama, JP
• Takaya Matsushita · Yokohama, JP

Key dates

• Filing date: Dec 10, 1992
• Grant date: Oct 18, 1994
• Expiry date: Dec 10, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0.degree. C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0.degree. C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.