Focused ion beam processing with charge control
US5357116A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1992 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Nov 23, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2065
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Focused ion beam (FIB) systems are used for IC mask or reticle repair and imaging and other applications. The impinging ions can cause an undesirable charge build-up on the specimen. Prior to beginning repair operations in a FIB system, a fluid containing a conductive material such as dimethyl ammonium salt is applied to the reticle, mask or device and allowed to dry, leaving a thin conductive layer on the specimen. A leakage path is preferably provided from the thin conductive layer to ground, to prevent charge buildup on the specimen. The FIB is used to cut through the conductive layer before commencing FIB deposition, to assure proper bonding of the deposited material. The technique also has application with electron beam imaging systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.