Semiconductor memory with trench capacitor
US5357131A · kind A · utility
17Cited by
14References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1993 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Jul 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/395
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.