Process for isotropically etching semiconductor devices
US5358601A · kind A · utility
167Cited by
11References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 14, 1993 |
| Grant date | Oct 25, 1994 |
| Priority date | — |
| Expiry date | Sep 14, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The etchant material of this invention comprises a chemical etchant composition including a halogen-containing feed gas and gaseous carbon dioxide. Typically, the halogen-containing feed gas is a fluorine-containing or a chlorine-containing feed gas, or both a fluorine-containing and a chlorine-containing feed gas. Preferably, the chlorine-containing feed gas comprises chlorine gas or HCl, and the fluorine-containing feed gas comprises SF.sub.6 or NF.sub.3. The fluorine-containing feed gas can also comprise CF.sub.4, or C2F.sub.6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.