Field effect devices formed from porous semiconductor materials
US5359214A · kind A · utility
9Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1993 |
| Grant date | Oct 25, 1994 |
| Priority date | — |
| Expiry date | Jun 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
Abstract
A field effect transistor device constructed in accordance with the present invention includes a channel of semiconductive material such as silicon having at least one row of pores extending therethrough. Internal pn junctions are fabricated within the porous region, such that the inside of each pore is coated with a layer of opposite conductivity type semiconductive material. When voltage is applied to the internal pn-junctions, the space charge around the pores widens or contracts, depending upon the direction of the bias, thereby permitting the modulation of current flow through the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.