Alexander A. Ned
85Patents
21h-index
18Co-inventors
85Inventor score
Filing activity: May 7, 1993 → Oct 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5955771A | Sensors for use in high vibrational applications and methods for fabricating same | Physics | 135 | Expired |
| US5286671A | Fusion bonding technique for use in fabricating semiconductor devices | Emerging Cross-Sectional Technologies | 132 | Expired |
| US5455445A | Multi-level semiconductor structures having environmentally isolated elements | Emerging Cross-Sectional Technologies | 130 | Expired |
| US5543349A | Method for fabricating a beam pressure sensor employing dielectrically isolated resonant beams | Emerging Cross-Sectional Technologies | 57 | Expired |
| US5614678A | High pressure piezoresistive transducer | Physics | 52 | Expired |
| US5973590A | Ultra thin surface mount wafer sensor structures and methods for fabricating same | Physics | 49 | Expired |
| US5891751A | Hermetically sealed transducers and methods for producing the same | Emerging Cross-Sectional Technologies | 42 | Expired |
| US7124639B1 | Ultra high temperature hermetically protected wirebonded piezoresistive transducer | Physics | 38 | Expired |
| US6595066B1 | Stopped leadless differential sensor | Physics | 37 | Expired |
| US5386142A | Semiconductor structures having environmentally isolated elements and method for making the same | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6210989A | Ultra thin surface mount wafer sensor structures and methods for fabricating same | Physics | 32 | Expired |
| US6058782A | Hermetically sealed ultra high temperature silicon carbide pressure transducers and method for fabricating same | Physics | 32 | Expired |
| US6326682A | Hermetically sealed transducer and methods for producing the same | Performing Operations; Transporting | 30 | Expired |
| US8482372B2 | Pressure transducer utilizing non-lead containing frit | Emerging Cross-Sectional Technologies | 27 | Active |
| US6327911A | High temperature pressure transducer fabricated from beta silicon carbide | Physics | 25 | Expired |
| US6229427A | Covered sealed pressure transducers and method for making same | Physics | 24 | Expired |
| US8497757B2 | Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers | Emerging Cross-Sectional Technologies | 24 | Active |
| US5401672A | Process of bonding semiconductor wafers having conductive semiconductor material extending through each wafer at the bond areas | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6424017B1 | Silicon-on-sapphire transducer | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7057247B2 | Combined absolute differential transducer | Electricity | 23 | Expired |
| US5461001A | Method for making semiconductor structures having environmentally isolated elements | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5702619A | Method for fabricating a high pressure piezoresistive transducer | Physics | 21 | Expired |
| US5539236A | Piezoresistive accelerometer with enhanced performance | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5473944A | Seam pressure sensor employing dielectically isolated resonant beams and related method of manufacture | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6588281B2 | Double stop structure for a pressure transducer | Physics | 16 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.