Method for pulling up semi-conductor single crystal
US5359959A · kind A · utility
12Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1992 |
| Grant date | Nov 1, 1994 |
| Priority date | — |
| Expiry date | Sep 30, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/917
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the speed of revolution of the quartz glass crucible and varying the intensity of the magnetic field applied to the melt according to the length of pull-up of the single crystal rod.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.