Device fabrication entailing submicron imaging

US5376505A · kind A · utility

Assignee

• AT&T CORP. · US

Inventors

• Steven Berger · Berkeley Heights, US
• William J. DeVore · Hayward, US

Key dates

• Filing date: Mar 16, 1992
• Grant date: Dec 27, 1994
• Expiry date: Mar 16, 2012

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B82Y40/00
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Fabrication of 0.25 gm design rule or smaller devices on chips, that may attain levels of 256 megabit or higher depends upon lithographic patterning by use of accelerated charged particle beams. Fabrication is expedited by acceleration values resulting in deBroglie wavelengths at least in order of magnitude smaller than such design rule to permit cost saving both in fabricating apparatus and resulting devices. Most importantly, such wavelength values permit significant variation in spatial angle of incidence of beam to wafer to permit both large instantaneous exposure areas and in temporal angle of incidence to expedite beam scanning as emitted from a fixed particle source.