Method of forming etch mask using particle beam deposition
US5382315A · kind A · utility
69Cited by
28References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 13, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Sep 13, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of forming an etch mask and patterning a substrate. The method includes directing a particle beam at a substrate without using a mask to deposit an etch mask on the substrate which selectively exposes predetermined portions of the substrate, the etch mask consisting of particles mechanically placed on the substrate by the particle beam, and then etching the exposed portions of the substrate through the etch mask to form channels therein. The process is well suited to fabricating high density copper/polyimide multi-chip modules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.