Solid state chain extension polymerization between Lewis acid oligomers and deblocked Lewis bases
US5382637A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1991 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Oct 31, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0387
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing phot-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.