Plasma etching using xenon
US5384009A · kind A · utility
38Cited by
10References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1993 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Jun 16, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for selectively etching a substrate, having grain boundaries and a resist material thereon, is described. The substrate is placed into an etch zone and a process gas comprising a primary etchant, a secondary etchant, and xenon is introduced into the etch zone. A plasma is generated in the zone to form an etch gas from the process gas, that substantially anisotropically etches the substrate at fast rates, with good selectivity, and reduced profile microloading. Preferably the primary etchant comprises Cl.sub.2, and the secondary etchant comprises BCl.sub.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.