Production of photolithographic structures

US5384220A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Recai Sezi · Simmerath, DE
• Horst Borndoerfer · Erlangen, DE
• Rainer Leuschner · Regensburg, DE
• Michael Sebald · Waischenfeld, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE
• Hellmut Ahne · Königsee, DE

Key dates

• Filing date: Dec 20, 1991
• Grant date: Jan 24, 1995
• Expiry date: Dec 20, 2011

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/167
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for the photolithographic production of structures in the submicron range including the following steps: PA1 - a photoresist layer comprising a polymer containing carboxylic acid anhydride and carboxylic acid tert. butyl ester groups, a photoinitiator which releases an acid when exposed, and a suitable solvent is applied to a substrate; PA1 - the photoresist layer is dried; PA1 - the photoresist layer is exposed in an imagewise manner; PA1 - the exposed photoresist layer is subjected to temperature treatment; PA1 - the photoresist layer treated in this way is subjected to liquid silylation; PA1 - the silylated photoresist layer is dry-developed in an anisotropic oxygen plasma; where the temperature treatment is handled in such a way that the photoresist becomes hydrophilic in the exposed areas.