Method to form a low resistant bond pad interconnect
US5384284A · kind A · utility
329Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1993 |
| Grant date | Jan 24, 1995 |
| Priority date | — |
| Expiry date | Oct 1, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by chemical vapor deposition or by electroless deposition; and adhering a conductive epoxy film to the metal layer, thereby forming a low resistive bond pad interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.