Apparatus and method for treating substrates
US5385624A · kind A · utility
29Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1991 |
| Grant date | Jan 31, 1995 |
| Priority date | — |
| Expiry date | Nov 29, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3348
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrates treating apparatus comprising a chamber provided with a section at which a semiconductor wafer is treated and with another section at which plasma is generated. A supplier for supplying mixed gas (O.sub.2 +CF.sub.4) into the plasma generating section in the chamber, high frequency electrodes for changing the gas into plasma, an ion trap for trapping ions in the plasma to send neutral radicals into the wafer treating section, and an exhaust mechanism for exhausting the wafer treating section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.