Sensing circuit for a floating gate memory device
US5386158A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 1993 |
| Grant date | Jan 31, 1995 |
| Priority date | — |
| Expiry date | Nov 8, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sensing circuit for a floating gate memory device is disclosed. The sensing circuit has a first voltage amplifier which generates a first output voltage, and a current amplifier which receives the first output voltage and generates a first output current in response thereto. The first voltage amplifier has a control transistor which generates a first output voltage in response to the memory device being in one state and a second output voltage in response to the memory device being in another state. The circuit also comprises a dummy cell, a second voltage amplifier connected thereto for generating a second output voltage. A second current amplifier receives the second output voltage and generates a second output current in response thereto. A comparator receives the first and second output currents, compares them, and generates an output indicative of the state of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.