Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub. 2
US5387556A · kind A · utility
33Cited by
8References
48Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1993 |
| Grant date | Feb 7, 1995 |
| Priority date | — |
| Expiry date | Feb 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for etching aluminum from a substrate, where portions of the aluminum are protected by a resist material, is described. The substrate is placed into a chamber and a process gas comprising HCl, Cl-containing etchant and N.sub.2 is introduced in the chamber. A plasma is generated in the chamber to generate from the process gas an etch gas that etches aluminum from the substrate at fast rates, with good selectivity, reduced profile microloading, and substantially only anisotropic etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.