Method of forming a GaAs FET having etched ohmic contacts
US5389564A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1992 |
| Grant date | Feb 14, 1995 |
| Priority date | — |
| Expiry date | Jun 22, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a III-V semiconductor FET (10, 30, 40) having etched ohmic contacts (19, 20, 36, 37, 43, 44). A gate (16) of the FET (10, 30, 40) is formed in contact with a surface of a III-V substrate (11). An ohmic contact (19, 20, 36, 37, 43, 44) is created to include an alloy in contact with the surface of the substrate (11). The ohmic contact (19, 20, 36, 37, 43, 44) is formed to abut the gate structure (16, 17, 18) by covering a portion of the gate structure (16, 17, 18) and the substrate (11) with the ohmic contact (19, 20, 36, 37, 43, 44), then, removing portions of the ohmic contact from the gate structure (16, 17, 18) by etching. The ohmic contact (19, 20, 36, 37, 43, 44) is formed to be substantially devoid of gold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.