Method for enhancement of semiconductor device contact pads
US5391516A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1991 |
| Grant date | Feb 21, 1995 |
| Priority date | — |
| Expiry date | Oct 10, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device contact pads are enhanced by forming a metal plate over at least a portion of the contact pad. "Enhancement" includes repair such as by bridging a reinforcing pad area over probe damage, general reinforcement or enlargement of a contact pad, and placement of a protective buffer pad over a contact pad. These methods are applicable to any semiconductor device with contact pads on a surface thereof, such as entire wafers, individual dice, and multi-chip High Density Interconnect (HDI) modules. The pad enhancement plate is formed by applying a planarizing dielectric layer over the entire device (if not already formed in the initial stages of HDI processing), and an enhancement access via is then formed to expose a portion of the contact pad to be enhanced. The entire device is metallized, and metal not over the exposed portion of the contact pad is subsequently removed. Localized heating of the metal plate can be achieved by a laser to effectuate a selective pseudo-weld or produce sintering for a low resistance ohmic contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.