Method and apparatus for manufacturing a semiconductor device
US5393624A · kind A · utility
125Cited by
10References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 3, 1992 |
| Grant date | Feb 28, 1995 |
| Priority date | — |
| Expiry date | Aug 3, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device of this invention relates to a method of manufacturing a semiconductor device with ultra-micropattern electrodes. Light is projected on a resist film, and reflected light from a region on which no semiconductor chip is formed, i.e., a flat region is detected to measure the thickness of the resist film. Based on the measured thickness, at least one of the resist film forming step, the exposing step, and the developing step is controlled, so that the electrodes have a desired width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.