Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
US5399238A · kind A · utility
94Cited by
38References
23Claims
0Family size
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Key dates
| Filing date | Apr 22, 1994 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Apr 22, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/107
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of making sub-micron low work function field emission tips without using photolithography. The method includes physical vapor deposition of randomly located discrete nuclei to form a discontinuous etch mask. In one embodiment an etch is applied to low work function material covered by randomly located nuclei to form emission tips in the low work function material. In another embodiment an etch is applied to base material covered by randomly located nuclei to form tips in the base material which are then coated with low work function material to form emission tips. Diamond is the preferred low work function material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.