Bipolar transistor with reduced base/collector capacitance

US5402002A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Thomas Meister · Taufkirchen, DE
• Hans-Willi Meul · Bruckmühl, DE

Key dates

• Filing date: Jul 24, 1991
• Grant date: Mar 28, 1995
• Expiry date: Jul 24, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A bipolar transistor includes insulator structures defining an active transistor zone having a base, an emitter with a side facing away from the base, and a collector with a collector terminal having a side facing away from the base. The insulator structures are disposed on the sides of the emitter and the collector terminal facing away from the base, and the insulator structures limit current flow through the active transistor zone. A process for producing the bipolar transistor includes producing a collector by selective epitaxy on a zone of a substrate surrounded by insulators. A zone for the collector is defined with a spacer technique in the following steps: photolithographically producing a first opening in a first layer exposing a surface of a second layer; including at least one insulation layer in the second layer; producing spacers at edges of the first opening; and etching a second opening in the second layer defining the zone for the collector during selective back-etching of the spacers.