Method for etching high aspect ratio features
US5409563A · kind A · utility
124Cited by
3References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 26, 1993 |
| Grant date | Apr 25, 1995 |
| Priority date | — |
| Expiry date | Feb 26, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming high aspect ratio features such as trenches in a semiconductor structure includes dry etching a substrate in a glow discharge system at elevated temperature. With the dry etching carried out at an elevated temperature of between about 300.degree. to 1100.degree. C., the diffusion of a reactant gas into the features is increased and the diffusion of byproduct molecules out of the features is increased. This increases the etch rate for forming the features, and allows features with very high aspect ratio to be formed at a high etch rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.