Method of forming crystalline silicon carbide coatings at low temperatures
US5415126A · kind A · utility
34Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1993 |
| Grant date | May 16, 1995 |
| Priority date | — |
| Expiry date | Aug 16, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above about 600.degree. C. in the presence of a silicon containing cyclobutane gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.