Method of fabrication for electro-optical devices
US5418190A · kind A · utility
38Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1993 |
| Grant date | May 23, 1995 |
| Priority date | — |
| Expiry date | Dec 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor electro-optical device in which a cleaving apparatus is used to separate the wafer into bars of semiconductor material by striking the wafer from the epitaxial side, directly beneath the substrate side scribe mark. A series of angularly shaped trenches are etched across the epitaxial side of the semiconductor bars to permit bar separation into individual devices that allows a plurality of bars to be processed simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.