Bidirectional blocking lateral MOSFET with improved on-resistance
US5420451A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1993 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | Nov 30, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/126
Abstract
A bidirectional current blocking lateral power MOSFET including a source and a drain which are not shorted to a substrate, and voltages that are applied to the source and drain are both higher than the voltage at which the body is maintained (for an N-channel MOSFET) or lower than the voltage at which the body is maintained (for a P-channel MOSFET). The on-resistance of the MOSFET is improved by decreasing the conductance of the epi region and disposing a thin threshold adjust layer on the surface of the substrate between the source and drain regions. An optional second punchthrough preventing implant is disposed on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.