Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
US5423285A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 24, 1992 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Nov 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A precursor comprising a metal 2-ethylhexanoate in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed. If the metal is titanium, the precursor comprises titanium 2-methoxyethoxide having at least a portion of its 2-methoxyethoxide ligands replaced by 2-ethylhexanoate. If the metal is a highly electropositive element, the solvent comprises 2-methoxyethanol. If the metal is lead, bismuth, thallium, or antimony, 1% to 75% excess metal is included in the precursor to account for evaporation of the oxide during baking and annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.