Michael C. Scott
50Patents
21h-index
35Co-inventors
84Inventor score
Filing activity: Sep 10, 1991 → Aug 15, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5519234A | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current | Electricity | 393 | Expired |
| US6051858A | Ferroelectric/high dielectric constant integrated circuit and method of fabricating same | Electricity | 92 | Expired |
| US5759923A | Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits | Electricity | 75 | Expired |
| US5434102A | Process for fabricating layered superlattice materials and making electronic devices including same | Electricity | 73 | Expired |
| US5699035A | ZnO thin-film varistors and method of making the same | Electricity | 57 | Expired |
| US5423285A | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications | Electricity | 49 | Expired |
| US5648114A | Chemical vapor deposition process for fabricating layered superlattice materials | Electricity | 49 | Expired |
| US5514822A | Precursors and processes for making metal oxides | Electricity | 46 | Expired |
| US5612082A | Process for making metal oxides | Electricity | 43 | Expired |
| US5614018A | Integrated circuit capacitors and process for making the same | Electricity | 41 | Expired |
| US5439845A | Process for fabricating layered superlattice materials and making electronic devices including same | Electricity | 38 | Expired |
| US5508226A | Low temperature process for fabricating layered superlattice materialsand making electronic devices including same | Electricity | 33 | Expired |
| US6056994A | Liquid deposition methods of fabricating layered superlattice materials | Electricity | 32 | Expired |
| US5688565A | Misted deposition method of fabricating layered superlattice materials | Electricity | 30 | Expired |
| US5468679A | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications | Electricity | 30 | Expired |
| US5559260A | Precursors and processes for making metal oxides | Electricity | 29 | Expired |
| US5723361A | Thin films of ABO.sub.3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same | Electricity | 25 | Expired |
| US5601869A | Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same | Electricity | 24 | Expired |
| US5516363A | Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors | Electricity | 22 | Expired |
| US5814849A | Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same | Electricity | 22 | Expired |
| US5843516A | Liquid source formation of thin films using hexamethyl-disilazane | Electricity | 21 | Expired |
| US6372286B1 | Barium strontium titanate integrated circuit capacitors and process for making the same | Electricity | 21 | Expired |
| US6072207A | Process for fabricating layered superlattice materials and making electronic devices including same | Electricity | 17 | Expired |
| US6174564A | Method of making metal polyoxyalkylated precursor solutions | Electricity | 15 | Expired |
| US5654456A | Precursors and processes for making metal oxides | Electricity | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.