Semiconductor laser including ridge confining buffer layer
US5426658A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1994 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Feb 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor laser device including a semiconductor substrate; a plurality of semiconductor layers including an AlGaAs layer epitaxially grown on said semiconductor substrate; a ridge having a reverse mesa shape and opposed sides formed of said plurality of semiconductor layers; an Al.sub.x Ga.sub.1-x As low temperature buffer layer (0.ltoreq..times..ltoreq.1) disposed on said AlGaAs layer at opposite sides of said ridge; a first semiconductor layer epitaxially disposed on said low temperature buffer layer at opposite sides of said ridge; and a second semiconductor layer epitaxially disposed on said ridge and said first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.