Method of forming a stacked capacitor using sidewall spacers and local oxidation

US5429980A · kind A · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Ming-Tzong Yang · Baoshan, TW
• Anchor Chen · Pingtung City, TW
• Chen-Chiu Hsue · Baoshan, TW

Key dates

• Filing date: Oct 5, 1994
• Grant date: Jul 4, 1995
• Expiry date: Oct 5, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/947

Abstract

A method for fabricating a capacitors on a dynamic random access memory (DRAM) cell having increased capacitance was achieved. The capacitor is fabricated on a silicon substrate having an active device region. The device region contains a field effect transistor (FET), having one capacitor aligned over and contacting the source/drain of the FET in the device region. The capacitor is increased in capacitance by forming a double recess in the bottom electrodes of the storage capacitors. The method of forming the double recess utilizes a sidewall spacer and local oxidation technique. After forming the bottom electrode having the double recess an insulating layer having a high dielectric constant is deposited as the inter-electrode insulator and a stop electrode is formed, completing the storage capacitor and the dynamic random access memory (DRAM) storage cell.