Anchor Chen
36Patents
11h-index
21Co-inventors
71Inventor score
Filing activity: Apr 22, 1994 → Jun 4, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6720267B1 | Method for forming a cantilever beam model micro-electromechanical system | Performing Operations; Transporting | 88 | Expired |
| US5472896A | Method for fabricating polycide gate MOSFET devices | Electricity | 38 | Expired |
| US5413950A | Method of forming a DRAM stacked capacitor cell | Electricity | 33 | Expired |
| US5523542A | Method for making dynamic random access memory cell capacitor | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5429980A | Method of forming a stacked capacitor using sidewall spacers and local oxidation | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5380673A | Dram capacitor structure | Electricity | 25 | Expired |
| US6037234A | Method of fabricating capacitor | Electricity | 23 | Expired |
| US5661081A | Method of bonding an aluminum wire to an intergrated circuit bond pad | Electricity | 15 | Expired |
| US5736441A | High-capacitance dynamic random access memory cell and method for fabricating the same | Electricity | 13 | Expired |
| US6989557B2 | Bipolar junction transistor and fabricating method | Electricity | 11 | Expired |
| US7244975B2 | High-voltage device structure | Electricity | 11 | Expired |
| US5731234A | Process for global planarization of memory and globally planarized memory | Electricity | 10 | Expired |
| US6566722B1 | Photo sensor in a photo diode on a semiconductor wafer | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6303424A | Method for fabricating a buried bit line in a DRAM cell | Electricity | 8 | Expired |
| US6759731B2 | Bipolar junction transistor and fabricating method | Electricity | 7 | Expired |
| US6159789A | Method for fabricating capacitor | Electricity | 7 | Expired |
| US6882029B1 | Junction varactor with high Q factor and wide tuning range | Electricity | 7 | Expired |
| US5744388A | Process of making a storage capacitor for dram memory cell | Electricity | 7 | Expired |
| US7235833B2 | Image sensor device and manufacturing method thereof | Electricity | 6 | Expired |
| US6884689B2 | Fabrication of self-aligned bipolar transistor | Electricity | 3 | Expired |
| US5936273A | High-capacitance dynamic random access memory cell having a storage capacitor on a continuous irregular surface | Electricity | 3 | Expired |
| US6835977B2 | Variable capactor structure | Electricity | 3 | Expired |
| US6187630A | Method for forming hemispherical silicon grains on designated areas of silicon layer | Electricity | 3 | Expired |
| US7157766B2 | Variable capactor structure and method of manufacture | Electricity | 3 | Expired |
| US6905935B1 | Method for fabricating a vertical bipolar junction transistor | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.