Method of forming semiconductor crystal and semiconductor device
US5431126A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1993 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Jun 22, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.