Jonathan Westwater
21Patents
12h-index
16Co-inventors
78Inventor score
Filing activity: Jun 22, 1993 → May 24, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5858862A | Process for producing quantum fine wire | Chemistry; Metallurgy | 131 | Expired |
| US5976957A | Method of making silicon quantum wires on a substrate | Emerging Cross-Sectional Technologies | 84 | Expired |
| US5953595A | Method of manufacturing thin film transistor | Emerging Cross-Sectional Technologies | 61 | Expired |
| US6130142A | Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate | Emerging Cross-Sectional Technologies | 58 | Expired |
| US6130143A | Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate | Emerging Cross-Sectional Technologies | 54 | Expired |
| US6285055A | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device | Electricity | 43 | Expired |
| US5637180A | Plasma processing method and plasma generator | Chemistry; Metallurgy | 24 | Expired |
| US5728610A | Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics | Electricity | 24 | Expired |
| US5567633A | Method for producing a thin film transistor having improved carrier mobility characteristics and leakage current characteristics | Electricity | 21 | Expired |
| US5437734A | Solar cell | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6376290B1 | Method of forming a semiconductor thin film on a plastic substrate | Electricity | 15 | Expired |
| US6093586A | Method of manufacturing a semiconductor device and a process of manufacturing a thin film transistor | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5627085A | Method for hydrogenating a polycrystal silicon layer of a thin film transistor | Electricity | 9 | Expired |
| US6794673B2 | Plastic substrate for a semiconductor thin film | Electricity | 6 | Expired |
| US10307786B2 | Anisotropy reduction in coating of conductive films | Emerging Cross-Sectional Technologies | 2 | Active |
| US5431126A | Method of forming semiconductor crystal and semiconductor device | Electricity | 2 | Expired |
| US11697130B2 | Anisotropy reduction in coating of conductive films | Emerging Cross-Sectional Technologies | 1 | Active |
| US9776209B2 | Transparent electrically conductive substrate and manufacturing method thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US11117163B2 | Anisotropy reduction in coating of conductive films | Emerging Cross-Sectional Technologies | 0 | Active |
| US9573163B2 | Anisotropy reduction in coating of conductive films | Emerging Cross-Sectional Technologies | 0 | Active |
| US12023708B2 | Anisotropy reduction in coating of conductive films | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.