Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
US5431799A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1993 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Oct 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma deposition system for sputter depositing material from a target onto a wafer, the system including a vacuum chamber; a platform for holding the wafer during plasma processing; a source onto which the target is mounted and for generating a plasma in the chamber during operation; an equipotential conductive plane dividing the chamber into an upper cavity in which the target is located and a lower cavity in which the wafer is located, the equipotential conductive plane permitting material sputtered from the target to pass therethrough; and an upper antenna located inside the upper cavity and surrounding the plasma, the upper antenna for coupling RF power into the source-generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.