Inventor · Sunnyvale, CA, US

Hiroji Hanawa

110Patents
42h-index
141Co-inventors
93Inventor score

Filing activity: Aug 26, 1987 → Mar 2, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7323401B2 Semiconductor substrate process using a low temperature deposited carbon-containing hard mask Emerging Cross-Sectional Technologies 541 Expired
US7393765B2 Low temperature CVD process with selected stress of the CVD layer on CMOS devices Emerging Cross-Sectional Technologies 530 Active
US7312162B2 Low temperature plasma deposition process for carbon layer deposition Electricity 523 Expired
US7109098B1 Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing Electricity 521 Expired
US7429532B2 Semiconductor substrate process using an optically writable carbon-containing mask Electricity 517 Active
US7422775B2 Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing Electricity 514 Expired
US7312148B2 Copper barrier reflow process employing high speed optical annealing Electricity 513 Active
US7335611B2 Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer Performing Operations; Transporting 512 Active
US6170428A Symmetric tunable inductively coupled HDP-CVD reactor Electricity 322 Expired
US6189483A Process kit Emerging Cross-Sectional Technologies 287 Expired
US6083344A Multi-zone RF inductively coupled source configuration Electricity 287 Expired
US6679981B1 Inductive plasma loop enhancing magnetron sputtering Electricity 271 Expired
US7244474B2 Chemical vapor deposition plasma process using an ion shower grid Chemistry; Metallurgy 178 Expired
US7695590B2 Chemical vapor deposition plasma reactor having plural ion shower grids Electricity 177 Expired
US7291360B2 Chemical vapor deposition plasma process using plural ion shower grids Chemistry; Metallurgy 177 Expired
US5849136A High frequency semiconductor wafer processing apparatus and method Electricity 158 Expired
US5449432A Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication Electricity 136 Expired
US5688357A Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor Electricity 102 Expired
US7183177B2 Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement Electricity 90 Expired
US5710486A Inductively and multi-capacitively coupled plasma reactor Electricity 85 Expired
US5431799A Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency Electricity 84 Expired
US5614060A Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal Electricity 82 Expired
US5618382A High-frequency semiconductor wafer processing apparatus and method Emerging Cross-Sectional Technologies 79 Expired
US5223457A High-frequency semiconductor wafer processing method using a negative self-bias Emerging Cross-Sectional Technologies 78 Expired
US6893907B2 Fabrication of silicon-on-insulator structure using plasma immersion ion implantation Emerging Cross-Sectional Technologies 71 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.