Apparatus for plasma treatment using electron cyclotron resonance
US5433788A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 4, 1993 |
| Grant date | Jul 18, 1995 |
| Priority date | — |
| Expiry date | Oct 4, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.