Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive
US5434031A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1993 |
| Grant date | Jul 18, 1995 |
| Priority date | — |
| Expiry date | Nov 17, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03C1/61
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a positive-working photoresist composition suitable for use in the photolithographic fine patterning work in the manufacture of electronic devices such as VLSIs. The composition comprises, in addition to an alkali-soluble novolac resin as a film-forming ingredient and an esterification product of naphthoquinone-1,2-diazide sulfonic acid as a photosensitive ingredient, a unique additive compound which is an alkyl or aralkyl ester of 2-hydroxy benzoic acid, such as benzyl salicylate, or a phenol compound substituted at least one alkyl group such as 2-tert-butyl-4-methyl phenol. By virtue of the addition of this unique additive, the inventive photoresist composition exhibits an excellent performance of suppressing the standing wave effect in addition to the excellent photosensitivity, resolving power and depth of focusing in the patterning exposure to light as well as good heat resistance of the patterned resist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.