Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples

US5438011A · kind A · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Guy T. Blalock · Boise, US
• Bradley J. Howard · Boise, US

Key dates

• Filing date: Mar 3, 1995
• Grant date: Aug 1, 1995
• Expiry date: Mar 3, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/948

Abstract

A method of forming a stacked container capacitor includes, a) providing a substrate having a node to which electrical connection to a capacitor is to be made; b) then, providing a layer of photoresist; c) patterning the photoresist to form a photoresist contact which overlaps within lateral confines of the node, and in a manner which produces inner photoresist contact sidewalls having standing wave ripples; d) providing a layer of sacrificial material over the photoresist and within the photoresist contact, the sacrificial layer having a thickness which less than completely fills the photoresist contact, the standing wave ripples first transferring to those regions of the sacrificial layer which overlap the photoresist contact inner sidewall standing wave ripples; e) anisotropically etching the sacrificial material to produce a male molding ring having outer sidewalls possessing the first transferred standing wave ripples; f) stripping the photoresist; g) providing a layer of electrically conductive material over and within the male molding ring, the first transferred standing wave ripples second transferring to those regions of the conductive layer which overlap the first transfe…