Bradley J. Howard
59Patents
12h-index
34Co-inventors
84Inventor score
Filing activity: Mar 3, 1995 → Mar 23, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8980758B1 | Methods for etching an etching stop layer utilizing a cyclical etching process | Electricity | 187 | Active |
| US9287095B2 | Semiconductor system assemblies and methods of operation | Electricity | 152 | Active |
| US9543163B2 | Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process | Electricity | 113 | Active |
| US5438011A | Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples | Emerging Cross-Sectional Technologies | 102 | Expired |
| US5897372A | Formation of a self-aligned integrated circuit structure using silicon-rich nitride as a protective layer | Electricity | 34 | Expired |
| US6232219A | Self-limiting method of reducing contamination in a contact opening, method of making contacts and semiconductor devices therewith, and resulting structures | Electricity | 31 | Expired |
| US5750441A | Mask having a tapered profile used during the formation of a semiconductor device | Electricity | 27 | Expired |
| US6350706B1 | Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same | Electricity | 16 | Expired |
| US5966611A | Semiconductor processing for forming capacitors by etching polysilicon and coating layer formed over the polysilicon | Electricity | 14 | Expired |
| US5711851A | Process for improving the performance of a temperature-sensitive etch process | Electricity | 14 | Expired |
| US5686357A | Method for forming a contact during the formation of a semiconductor device | Electricity | 12 | Expired |
| US6056850A | Apparatus for improving the performance of a temperature-sensitive etch process | Electricity | 12 | Expired |
| US5851916A | Formation of a self-aligned integrated circuit structures using planarization to form a top surface | Electricity | 11 | Expired |
| US5888877A | Method of forming recessed container cells | Electricity | 11 | Expired |
| US7625460B2 | Multifrequency plasma reactor | Electricity | 10 | Expired |
| US6221205A | Apparatus for improving the performance of a temperature-sensitive etch | Electricity | 9 | Expired |
| US6716763B2 | Method of controlling striations and CD loss in contact oxide etch | Electricity | 9 | Expired |
| US6753264B2 | Method of controlling striations and CD loss in contact oxide etch | Electricity | 9 | Expired |
| US7884925B2 | Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials | Electricity | 9 | Active |
| US7122480B2 | Method of plasma etching a substrate | Electricity | 8 | Expired |
| US6117767A | Method of forming an integrated circuit structure | Electricity | 8 | Expired |
| US6025271A | Method of removing surface defects or other recesses during the formation of a semiconductor device | Electricity | 8 | Expired |
| US6127239A | Semiconductor processing methods, and methods of forming capacitors | Electricity | 7 | Expired |
| US6335292B1 | Method of controlling striations and CD loss in contact oxide etch | Electricity | 7 | Expired |
| US5970358A | Method for forming a capacitor wherein the first capacitor plate includes electrically coupled conductive layers separated by an intervening insulative layer | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.