Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure
US5443645A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1993 |
| Grant date | Aug 22, 1995 |
| Priority date | — |
| Expiry date | Dec 28, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A deposited film-forming apparatus comprising a reaction chamber capable of maintaining at a reduced pressure, means for arranging a substrate on which a film is to be formed in said reaction chamber, a gas feed means for supplying a gaseous raw material into said reaction chamber and means for introducing a microwave energy into said reaction chamber, characterized in that said gas feed means is arranged in the space circumscribed by said substrate, said gas feed means comprises a multiple pipe structure, said multiple pipe structure being connected to a gas supply source for supplying said gaseous raw material, the respective constituent pipes of said multiple pipe structure being provided with a plurality of gas spouting holes such that said gas spouting holes are in communication with each other, and means for applying a bias voltage between said substrate and said gas feed means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.