Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
US5449432A · kind A · utility
136Cited by
2References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 25, 1993 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Oct 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma generator for the fabrication of integrated circuit devices is described. The generator includes a separate plasma igniter electrode to apply the electrical power to a gas within a treatment chamber necessary to create a desired plasma. The plasma, once it is initiated, then is sustained by inductive coupling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.