Apparatus and method for generating plasma of uniform flux density
US5449977A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 20, 1994 |
| Grant date | Sep 12, 1995 |
| Priority date | — |
| Expiry date | Oct 20, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Under a reduced pressure, an RF electric field is applied at a right angle to a main face of an article-to-be-treated such as a semiconductor, wafer placed on a cathode in treatment chamber. At the same time, a magnetic field is applied thereto by a magnetic field applying device to generate a plasma by a magnetron discharge. The magnetic field is formed in such a fashion that adjacent magnetic lines of flux are not in parallel with one another on the main face of the article-to-be-treated. Charged particles in the plasma drift in a diverging direction with Lorenz force so as to prevent electrification of the article-to-be-treated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.