Non-volatile semiconductor memory device
US5453955A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1994 |
| Grant date | Sep 26, 1995 |
| Priority date | — |
| Expiry date | Jun 7, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device includes read charging transistors for setting bit lines at a predetermined read potential to perform a data read operation, and read discharging transistors for setting non-selected bit lines at the ground potential during the read operation. These transistors are controlled by different control signals, obtained by detecting an address change, for every other bit line in accordance with an input address so that the read discharging transistors are kept ON to set the non-selected bit lines at the ground potential before and during the data read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.