Variable rate distribution gas flow reaction chamber
US5455070A · kind A · utility
24Cited by
11References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1993 |
| Grant date | Oct 3, 1995 |
| Priority date | — |
| Expiry date | Sep 16, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A wafer processing reactor having an input manifold to enable control of a process gas flow profile over a wafer that is being processed. Both process gas relative concentrations and flow rates can be controlled, thereby enabling an increased uniformity of processing across the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.