Process for fabricating a lateral bipolar junction transistor
US5455188A · kind A · utility
13Cited by
5References
6Claims
0Family size
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Inventor
Key dates
| Filing date | Jan 31, 1995 |
| Grant date | Oct 3, 1995 |
| Priority date | — |
| Expiry date | Jan 31, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/011
Abstract
A process for fabricating lateral bipolar junction transistor semiconductor device. Base and emitter regions are precisely aligned. The resulting lateral width of the base region of the transistor device is able be precisely controlled. A heavily-doped implantation region is formed underneath the base region of the transistor structural configuration such that electron carriers in the transistor are prevented from escaping from beneath the base region of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.