Sheng-Hsing Yang
48Patents
12h-index
18Co-inventors
74Inventor score
Filing activity: Nov 1, 1993 → Aug 10, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5442214A | VDMOS transistor and manufacturing method therefor | Emerging Cross-Sectional Technologies | 127 | Expired |
| US5424231A | Method for manufacturing a VDMOS transistor | Emerging Cross-Sectional Technologies | 126 | Expired |
| US5501996A | Method of manufacture of high coupling ratio single polysilicon floating gate EPROM or EEPROM cell | Emerging Cross-Sectional Technologies | 38 | Expired |
| US5614421A | Method of fabricating junction termination extension structure for high-voltage diode devices | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5424233A | Method of making electrically programmable and erasable memory device with a depression | Electricity | 24 | Expired |
| US5376572A | Method of making an electrically erasable programmable memory device with improved erase and write operation | Electricity | 23 | Expired |
| US5466616A | Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6153913A | Electrostatic discharge protection circuit | Electricity | 20 | Expired |
| US5382820A | High voltage CMOS device to integrate low voltage controlling device | Electricity | 20 | Expired |
| US5482873A | Method for fabricating a bipolar power transistor | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5455188A | Process for fabricating a lateral bipolar junction transistor | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5376568A | Method of fabricating high voltage complementary metal oxide semiconductor transistors | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5574306A | Lateral bipolar transistor and FET | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5393679A | Use of double charge implant to improve retrograde process PMOS punch through voltage | Electricity | 11 | Expired |
| US5395777A | Method of producing VDMOS transistors | Electricity | 9 | Expired |
| US5576569A | Electrically programmable and erasable memory device with depression in lightly-doped source | Electricity | 9 | Expired |
| US5523246A | Method of fabricating a high-voltage metal-gate CMOS device | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5547895A | Method of fabricating a metal gate MOS transistor with self-aligned first conductivity type source and drain regions and second conductivity type contact regions | Electricity | 8 | Expired |
| US5569613A | Method of making bipolar junction transistor | Electricity | 8 | Expired |
| US5444002A | Method of fabricating a short-channel DMOS transistor with removable sidewall spacers | Electricity | 8 | Expired |
| US5508547A | LDMOS transistor with reduced projective area of source region | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5486482A | Process for fabricating metal-gate CMOS transistor | Electricity | 7 | Expired |
| US5422286A | Process for fabricating high-voltage semiconductor power device | Electricity | 7 | Expired |
| US6063674A | Method for forming high voltage device | Electricity | 6 | Expired |
| US5518938A | Process for fabricating a CMOS transistor having high-voltage metal-gate | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.