Thin capacitor dielectric by rapid thermal processing
US5455204A · kind A · utility
21Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1994 |
| Grant date | Oct 3, 1995 |
| Priority date | — |
| Expiry date | Dec 12, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0214
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a continuous rapid thermal process for forming a substantially uniform oxynitride film on fingered three-dimensional silicon structures comprising cleaning of the silicon substrate and growth of silicon oxide in the presence of ozone, nitridation of the silicon oxide layer in the presence of NH.sub.3 and reoxidation of the oxynitride layer in the presence of oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.