Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
US5468679A · kind A · utility
30Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1993 |
| Grant date | Nov 21, 1995 |
| Priority date | — |
| Expiry date | Nov 18, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A precursor comprising a medium-length ligand carboxylate, such as a metal 2-ethylhexanoate, in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.